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光注入退火爐

光注入退火爐

調(diào)節(jié)電池片費(fèi)米能級變化,控制H總量及價(jià)態(tài),提高H鈍化與缺陷修復(fù)效率,達(dá)到降低P型電池衰減效應(yīng),提高N型電池轉(zhuǎn)換效率的效果。

設(shè)備名稱 Equipment Name

光注入退火爐  Light Injection Annealing Furnace

設(shè)備型號 Equipment Model

SC-LED05L/RA


設(shè)備用途 Equipment Application

調(diào)節(jié)電池片費(fèi)米能級變化,控制H總量及價(jià)態(tài),提高H鈍化與缺陷修復(fù)效率,達(dá)到降低P型電池衰減效應(yīng),提高N型電池轉(zhuǎn)換效率的效果。

By adjusting the Fermi energy level of the cell, controlling the total amount and valence state of H,improving the efficiency of H passivation and defect repair, to reduce the LID effect of P-type cells and improve the conversion efficiency of N-type cells.


工藝流程  Process Flow

預(yù)熱→光注入→冷卻

Pre-heating →Light Injection →Cooling


技術(shù)特點(diǎn)  Features

1、雙軌產(chǎn)線,機(jī)架電氣完全獨(dú)立,互不干擾。

Dual-track production line, the rack and electrical parts completely independent without interfering operations of each other.

2、大產(chǎn)能:匹配絲印工序產(chǎn)能,CT≤0.80秒,基于硅片尺寸M10(18X±0.5mm*18X±0.5mm)。
High throughput: match with the throughput of screen printing process, CT≤0.80s,based on silicon wafer size M10 (18X±0.5mm*18X±0.5mm). 


設(shè)備參數(shù)  Parameters